Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

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	Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
	Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ; Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2004
会议名称	13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称	SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials
页码	15-18
会议日期	SEP 20-25, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8668-X
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.
关键词	Deep-level Defects Fe-doped Inp Grown Inp Spectroscopy Resonance Wafer
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9910
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Zhang, YH,et al. Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:15-18.

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