Recent progresses of SOI-based photonic devices - art. no. 60201R

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Recent progresses of SOI-based photonic devices - art. no. 60201R
	Yu JZ; Chen SW; Li ZY; Chen YY; Sun F; Li YT; Li YP; Liu JW; Yang D; Xia JS; Li CB; Wang QM; Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2005
会议名称	Conference on Optoelectronic Materials and Devices for Optical Communications
会议录名称	Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	6020: R201-R201
会议日期	NOV 07-10, 2005
会议地点	Shanghai, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-6051-6
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
关键词	Soi
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9900
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yu JZ,Chen SW,Li ZY,et al. Recent progresses of SOI-based photonic devices - art. no. 60201R[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:6020: R201-R201.

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