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Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm | |
Gong, C (Gong, Chuniuan); Ho, XW (Ho, Xiongwei); Gong, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. | |
2006 | |
会议名称 | IEEE International Conference of Nano/Micro Engineered and Molecular Systems |
会议录名称 | 2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems |
页码 | Vols 1-3: 475-478 |
会议日期 | JAN 18-21, 2006 |
会议地点 | Zhuhai, PEOPLES R CHINA |
出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
出版者 | IEEE |
ISBN | 978-1-4244-0139-0 |
部门归属 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
摘要 | We used Plane Wave Expansion Method and a Rapid Genetic Algorithm to design two-dimensional photonic crystals with a large absolute band gap. A filling fraction controlling operator and Fourier transform data storage mechanism had been integrated into the genetic operators to get desired photonic crystals effectively and efficiently. Starting from randomly generated photonic crystals, the proposed RGA evolved toward the best objectives and yielded a square lattice photonic crystal with the band gap (defined as the gap to mid-gap ratio) as large as 13.25%. Furthermore, the evolutionary objective was modified and resulted in a satisfactory PC for better application to slab system. |
关键词 | Band-gaps Genetic Algorithms Photonic Crystals |
学科领域 | 光电子学 |
主办者 | IEEE. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/9826 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Gong, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. |
推荐引用方式 GB/T 7714 | Gong, C ,Ho, XW ,Gong, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.. Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:Vols 1-3: 475-478. |
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