Implantable Microsystem for Wireless Neural Recording Applications

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Implantable Microsystem for Wireless Neural Recording Applications
	Zhang X (Zhang Xu); Pei WH (Pei Weihua); Huang BJ (Huang Beiju); Chen J (Chen Jin); Guan N (Guan Ning); Chen HD (Chen Hongda); Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2009
会议名称	ICME International Conference on Complex Medical Engineering
会议录名称	2009 ICME INTERNATIONAL CONFERENCE ON COMPLEX MEDICAL ENGINEERING
页码	234-237
会议日期	APR 09-11, 2009
会议地点	Tempe, AZ
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-3315-5
部门归属	[zhang, xu; pei, weihua; huang, beiju; chen, jin; guan, ning; chen, hongda] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A prototype microsystem is presented for wireless neural recording application. An inductive link was built for transcutaneous wireless power transfer and data transmission. Total 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 - 5 MHz with a distance of 0-10 mm. The integrated amplifiers were designed with a limited bandwidth for neural signals acquisition. The gain of 60 dB was obtained by preamplifier at 7 Hz - 3 KHz. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments with 0.374 - 2 mW power comsumption and a maximum data rate of 500 Kbps at 100 MHz. All the integrated circuits modules except the power recovery circuit were tested or stimulated under a 3.3 V power supply, and fabricated in standard CMOS processing.
关键词	System
学科领域	光电子学
主办者	ICME.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8366
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang X ,Pei WH ,Huang BJ ,et al. Implantable Microsystem for Wireless Neural Recording Applications[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2009:234-237.

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