Morphology and wetting layer properties of InAs/GaAs nanostructures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Morphology and wetting layer properties of InAs/GaAs nanostructures
	Zhao C; Chen YH; Xu B; Tang CG; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2009
会议名称	5th International Conference on Semiconductor Quantum Dots
会议录名称	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
页码	VOL 6,NO 4,6 (4): 789-792
会议日期	MAY 11-16, 2008
会议地点	Gyeongju, SOUTH KOREA
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	[zhao, chao; chen, yonghai; xu, bo; tang, chenguang; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词	Molecular-beam Epitaxy
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8266
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao C,Chen YH,Xu B,et al. Morphology and wetting layer properties of InAs/GaAs nanostructures[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2009:VOL 6,NO 4,6 (4): 789-792.

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