SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
在硅衬底上磁控溅射制备铁磁性锰硅薄膜的方法
刘力锋; 陈诺夫; 尹志岗; 杨霏; 柴春林
2006-12-27
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2005-06-24
Language中文
Application Number200510079720
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3653
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘力锋,陈诺夫,尹志岗,等. 在硅衬底上磁控溅射制备铁磁性锰硅薄膜的方法[P]. 2006-12-27.
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