Knowledge Management System Of Institute of Semiconductors,CAS
| 大计量离子注入法制备磁体/半导体混杂结构的方法 | |
| 宋书林; 陈诺夫; 周剑平; 杨少延; 刘志凯; 柴春林 | |
| 2005-03-09 | |
| Date Available | 2009-06-04 ; 2009-06-11 |
| Subtype | 发明 |
| Application Date | 2003-08-29 |
| Language | 中文 |
| Application Number | CN03155722.8 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/2745 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 宋书林,陈诺夫,周剑平,等. 大计量离子注入法制备磁体/半导体混杂结构的方法[P]. 2005-03-09. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 03155722.pdf（322KB） | 限制开放 | -- | Application Full Text | |||
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