Knowledge Management System Of Institute of Semiconductors,CAS
大计量离子注入法制备磁体/半导体混杂结构的方法 | |
宋书林; 陈诺夫; 周剑平; 杨少延; 刘志凯; 柴春林 | |
2005-03-09 | |
Date Available | 2009-06-04 ; 2009-06-11 |
Subtype | 发明 |
Application Date | 2003-08-29 |
Language | 中文 |
Application Number | CN03155722.8 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/2745 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 宋书林,陈诺夫,周剑平,等. 大计量离子注入法制备磁体/半导体混杂结构的方法[P]. 2005-03-09. |
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File Name/Size | DocType | Version | Access | License | ||
03155722.pdf(322KB) | 限制开放 | -- | Application Full Text |
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