SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
大计量离子注入法制备磁体/半导体混杂结构的方法
宋书林; 陈诺夫; 周剑平; 杨少延; 刘志凯; 柴春林
2005-03-09
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2003-08-29
Language中文
Application NumberCN03155722.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/2745
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
宋书林,陈诺夫,周剑平,等. 大计量离子注入法制备磁体/半导体混杂结构的方法[P]. 2005-03-09.
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