SEMI OpenIR  > 半导体材料科学中心
GaN材料及InGaAs/InP量子阱结构材料的GSMBE生长及性能研究
王晓亮
Subtype博士后
Thesis Advisor孔梅影
1997
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Subject Area半导体材料
Date Available2013-12-30
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24464
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
王晓亮. GaN材料及InGaAs/InP量子阱结构材料的GSMBE生长及性能研究[D]. 北京. 中国科学院研究生院,1997.
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