Electronic investigation of self-organized InAs quantum dots

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	Electronic investigation of self-organized InAs quantum dots
	Chen F; Feng SL; Yang XZ; Zhao Q; Wang ZM; Wen LS; Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
	1997
会议名称	10th International Conference on Superlattices, Microstructures and Microdevices
会议录名称	PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
页码	179-185
会议日期	JUL 08-11, 1997
会议地点	LINCOLN, NEBRASKA
出版地	BOX 11, 105523 MOSCOW, RUSSIA
出版者	V S V CO. LTD
ISSN	0204-3467
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; beijing normal univ, dept phys, beijing 100875, peoples r china
摘要	Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.
关键词	Carrier Relaxation
学科领域	半导体物理
主办者	Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15087
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen F,Feng SL,Yang XZ,et al. Electronic investigation of self-organized InAs quantum dots[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:179-185.

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