MOVPE growth of GaN and LED on (111) MgAl2O4

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	MOVPE growth of GaN and LED on (111) MgAl2O4
	Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC; Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
	1998
会议名称	2nd International Conference on Nitride Semiconductors (ICNS 97)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 189
页码	197-201
会议日期	OCT 27-31, 1997
会议地点	TOKUSHIMA CITY, JAPAN
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; kansas state univ, dept phys, manhattan, ks 66506 usa; chinese acad sci, beijing lab electron microscopy, ctr condensed matter, beijing 100080, peoples r china; chinese acad sci, inst semicond, lab semicond mat, beijing 100083, peoples r china
摘要	The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Gan Mgal2o4 Movpe Led Diodes
学科领域	半导体材料
主办者	Japan Soc Appl Phys.; Inst Electr Informat & Commun Engineers.; IEEE.; Electron Devices Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15075
专题	中国科学院半导体研究所（2009年前）
通讯作者	Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
推荐引用方式 GB/T 7714	Duan SK,Teng XG,Wang YT,et al. MOVPE growth of GaN and LED on (111) MgAl2O4[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:197-201.

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