Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

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	Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
	Liu J; Gornik E; Xu SJ; Zheng HZ; Liu J Vienna Tech Univ Inst Festkorperelekt Floragasse 7-1 A-1040 Vienna Austria. 电子邮箱地址: j.liu.20@bham.ac.uk
	1998
会议名称	2nd International Conference on Low Dimensional Structures and Devices
会议录名称	MICROELECTRONIC ENGINEERING, 43-4
页码	349-354
会议日期	MAY 19-21, 1997
会议地点	LISBON, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0167-9317
部门归属	vienna tech univ, inst festkorperelekt, a-1040 vienna, austria; natl univ singapore, dept elect engn, ctr optoelect, singapore 119260, singapore; acad sinica, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Gaas/alas Superlattices Transport Tunnelling Landau Level Negative Differential Conductivity Low-field Mobility Semiconductor Superlattice Temperature-dependence Conductance Transport Localization Minibands
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15065
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu J Vienna Tech Univ Inst Festkorperelekt Floragasse 7-1 A-1040 Vienna Austria. 电子邮箱地址: j.liu.20@bham.ac.uk
推荐引用方式 GB/T 7714	Liu J,Gornik E,Xu SJ,et al. Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:349-354.

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