Knowledge Management System Of Institute of Semiconductors,CAS
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials | |
Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG; Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico. 电子邮箱地址: lfzou@ags.ciateq.mx | |
1998 | |
会议名称 | 14th Latin American Symposiumm on Solid State Physics |
会议录名称 | REVISTA MEXICANA DE FISICA, 44 |
页码 | 93-96 |
会议日期 | JAN 11-16, 1998 |
会议地点 | OAXACA, MEXICO |
出版地 | APARTADO POSTAL 70-348, COYOACAN 04511, MEXICO |
出版者 | SOCIEDAD MEXICANA DE FISICA |
ISSN | 0035-001X |
部门归属 | ctr invest opt ac, unidad aguascalientes, aguascalientes 20000, ags, mexico; zhongnan univ natl wuhan, dept comp sci, wuhan 430074, peoples r china; ctr invest opt, leon 37000, gto, mexico; chinese acad sci, inst semicond, beijing 100083, peoples r china |
摘要 | Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers. |
关键词 | Strain Relaxation Heterostructures |
学科领域 | 半导体物理 |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/15057 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico. 电子邮箱地址: lfzou@ags.ciateq.mx |
推荐引用方式 GB/T 7714 | Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[C]. APARTADO POSTAL 70-348, COYOACAN 04511, MEXICO:SOCIEDAD MEXICANA DE FISICA,1998:93-96. |
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