Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
	Wang JN; Sun BQ; Wang XR; Wang YQ; Ge WK; Jiang DS; Wang HL; Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
	2000
会议名称	50th IUMRS International Conference on Advanced Materials
会议录名称	PHYSICA E, 8 (2)
页码	141-145
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1386-9477
部门归属	hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china; chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china
摘要	We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Superlattices Gaas/alas Electric Field Domains Tunnelling Oscillations
学科领域	半导体物理
主办者	Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14969
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Wang JN,Sun BQ,Wang XR,et al. Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:141-145.

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