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| Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice | |
Wang JN; Sun BQ; Wang XR; Wang YQ; Ge WK; Jiang DS ; Wang HL; Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
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| 2000 | |
| Conference Name | 50th IUMRS International Conference on Advanced Materials |
| Source Publication | PHYSICA E, 8 (2) |
| Pages | 141-145 |
| Conference Date | JUN 13-18, 1999 |
| Conference Place | BEIJING, PEOPLES R CHINA |
| Publication Place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Publisher | ELSEVIER SCIENCE BV |
| ISSN | 1386-9477 |
| metadata_83 | hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china; chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china |
| Abstract | We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved. |
| Keyword | Superlattices Gaas/alas Electric Field Domains Tunnelling Oscillations |
| Subject Area | 半导体物理 |
| Funding Organization | Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci. |
| Indexed By | CPCI-S |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/14969 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China. |
| Recommended Citation GB/T 7714 | Wang JN,Sun BQ,Wang XR,et al. Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:141-145. |
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| File Name/Size | DocType | Version | Access | License | ||
| 2945.pdf（113KB） | 限制开放 | -- | Application Full Text | |||
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