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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [29]
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中科院半导体材料科学... [1]
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无权访问的条目
期刊论文
Authors:
Nan, HY
;
Wang, ZL
;
Wang, WH
;
Liang, Z
;
Lu, Y
;
Chen, Q
;
He, DW
;
Tan, PH
;
Miao, F
;
Wang, XR
;
Wang, JL
;
Ni, ZH
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View/Download:1353/218
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Submit date:2015/04/02
无权访问的条目
期刊论文
Authors:
Yang XR
;
Xu B
;
Wang HF
;
Zhao GQ
;
Shi SH
;
Shen XZ
;
Li JF
;
Wang ZG
;
Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
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View/Download:1565/327
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Submit date:2011/07/05
无权访问的条目
期刊论文
Authors:
Huang XH (Huang, Xiaohui)
;
Wang H (Wang, Huaibing)
;
Yin S (Yin, Song)
;
Chen XR (Chen, Xiaorong)
;
Chen W (Chen, Wei)
;
Yang H (Yang, Hui)
;
Wang, H, CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hbwang2006@sinano.ac.cn
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View/Download:1025/428
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Submit date:2010/03/08
一种制备氮化物单晶衬底的氢化物气相外延装置
专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:
段瑞飞
;
刘喆
;
钟兴儒
;
魏同波
;
马平
;
王军喜
;
曾一平
;
李晋闽
Adobe PDF(616Kb)
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View/Download:1187/234
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Submit date:2009/06/11
制造厚膜氮化物材料的氢化物气相外延装置
专利
专利类型: 发明, 申请日期: 2006-12-20, 公开日期: 2009-06-04, 2009-06-11
Inventors:
刘喆
;
王军喜
;
钟兴儒
;
李晋闽
;
曾一平
;
段瑞飞
;
马平
;
魏同波
;
林郭强
Adobe PDF(457Kb)
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View/Download:1409/189
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Submit date:2009/06/11
无权访问的条目
期刊论文
Authors:
Yang XR (Yang X. R.)
;
Xu B (Xu B.)
;
Wang ZG (Wang Z. G.)
;
Jin P (Jin P.)
;
Liang P (Liang P.)
;
Hu Y (Hu Y.)
;
Sun H (Sun H.)
;
Chen YH (Chen Y. H.)
;
Liu FL (Liu F. L.)
;
Yang, XR, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yangxr@mail.semi.ac.cn
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View/Download:972/287
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Submit date:2010/04/11
无权访问的条目
期刊论文
Authors:
赵有文
;
孙文荣
;
段满龙
;
董志远
;
杨子祥
;
吕旭如
;
王应利
Adobe PDF(532Kb)
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View/Download:948/289
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Submit date:2010/11/23
无权访问的条目
期刊论文
Authors:
Chen NF
;
Zhong XR
;
Lin LY
;
Zhang M
;
Wang YS
;
Bai XW
;
Zhao J
;
Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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View/Download:1052/367
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Submit date:2010/08/12
无权访问的条目
期刊论文
Authors:
Liu HY
;
Xu B
;
Qian JJ
;
Ye XL
;
Han Q
;
Ding D
;
Liang JB
;
Zhong XR
;
Wang ZG
;
Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(261Kb)
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View/Download:1002/287
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Submit date:2010/08/12
非破坏性定量检测砷化镓单晶化学配比的方法
专利
专利类型: 发明, 申请日期: 2000-07-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:
陈诺夫
;
林兰英
;
王玉田
;
何宏家
;
钟兴儒
Adobe PDF(259Kb)
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View/Download:1157/205
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Submit date:2009/06/11