Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

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	Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon
	Tan LW; Wang J; Wang QY; Yu YH; Lin LY; Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.
	2002
会议名称	Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码	4302-4305
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.
关键词	Epitaxial-growth Al2o3 Si
学科领域	半导体材料
主办者	Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14875
专题	中国科学院半导体研究所（2009年前）
通讯作者	Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Tan LW,Wang J,Wang QY,et al. Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4302-4305.

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