Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films
	Chen CY; Chen WD; Song SF; Hsu CC; Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码	4246-4249
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.
关键词	Hydrogenated Amorphous-silicon Photoluminescence Luminescence Intensity System
学科领域	半导体材料
主办者	Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14869
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen CY,Chen WD,Song SF,et al. Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4246-4249.

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