The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy
	Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
会议录名称	BLUE LASER AND LIGHT EMITTING DIODES II
页码	93-96
会议日期	SEP 29-OCT 02, 1998
会议地点	CHIBA, JAPAN
出版地	1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN
出版者	OHMSHA LTD
ISBN	4-274-90245-5
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.
关键词	Sapphire
学科领域	半导体材料
主办者	Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13803
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang LS,Liu XL,Zan YD,et al. The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy[C]. 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN:OHMSHA LTD,1998:93-96.