Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon

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	Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon
	Yue GZ; Chen LF; Wang Q; Iwaniczko E; Kong GL; Baugh J; Wu Y; Han DX; Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
会议录名称	AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
页码	685-690
会议日期	APR 14-17, 1998
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-413-0
部门归属	acad sinica, inst semicond, beijing 100083, peoples r china
摘要	Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from similar to 2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).
关键词	Vibrational-spectra
学科领域	半导体材料
主办者	Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13795
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yue GZ,Chen LF,Wang Q,et al. Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:685-690.