Growth and photoluminescence of InAlGaN films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth and photoluminescence of InAlGaN films
	Li DB; Dong X; Huang JS; Liu XL; Xu ZY; Wang ZG; Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	5th International Conference on Nitride Semiconductors (ICNS-5)
会议录名称	5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS
页码	2001-2005
会议日期	MAY 25-30, 2003
会议地点	NARA, JAPAN
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISBN	3-527-40489-9
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Multiple-quantum Wells Quaternary Alloys Optical-properties
学科领域	半导体材料
主办者	Japan Soc Appl Phys.; Japan Soc Promot Sci, 162nd Comm Wide Bandgap Semiconductor Photon & Elect Devices.; Japan Assoc Crystal Growth.; Elect Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13561
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li DB,Dong X,Huang JS,et al. Growth and photoluminescence of InAlGaN films[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2003:2001-2005.

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