An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags
	Feng P (Feng Peng); Li YL (Li Yunlong); Wu NJ (Wu Nanjian); Feng, P, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn
	2009
会议名称	THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE
会议录名称	PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE: 713-716 2009
页码	713-716
会议日期	2009
会议地点	San Jose, CA
合作性质	其它
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-4072-6
摘要	An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).
学科领域	微电子学
主办者	IEEE Solid State Circuits Soc.; IEEE Electron Decices Soc.
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/11144
专题	中国科学院半导体研究所（2009年前）
通讯作者	Feng, P, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn
推荐引用方式 GB/T 7714	Feng P ,Li YL ,Wu NJ ,et al. An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2009:713-716.

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