Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
	Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX; Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
	2006
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议录名称	JOURNAL OF RARE EARTHS
页码	24: 75-77 Sp. Iss. SI
会议日期	OCT 16-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA
出版者	METALLURGICAL INDUSTRY PRESS
ISSN	1002-0721
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.
关键词	Indium Phosphide
学科领域	半导体材料
主办者	Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10032
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Duan, ML,et al. Growth of high quality semi-insulating InP single crystal by suppression of compensation defects[C]. 2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA:METALLURGICAL INDUSTRY PRESS,2006:24: 75-77 Sp. Iss. SI.

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