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Influence of a tilted cavity on quantum-dot optoelectronic active devices 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 37-40
Authors:  Liu Wanglai;  Xu Bo;  Liang Ping;  Hu Ying;  Sun Hong;  Lü Xueqin;  Wang Zhanguo
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解理面预处理方法对二次外延的影响 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 3, 页码: 544-548
Authors:  张春玲;  唐蕾;  徐波;  陈涌海;  王占国
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基于图形衬底的InAs/GaAs量子点和量子环液滴外延 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 2003-2008
Authors:  赵暕;  陈涌海;  王占国;  徐波
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不同淀积厚度InAs量子点的喇曼散射 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 1012-1015
Authors:  张冠杰;  徐波;  陈涌海;  姚江宏;  林耀望;  舒永春;  皮彪;  邢晓东;  刘如彬;  舒强;  王占国;  许京军
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MBE Growth of High Electron Mobility InP Epilayers 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1485-1488
Authors:  Su Yongchun;  Yao Jianghong;  Lin Yaowang;  Xing Xiaodong;  Pi Biao;  Xu Bo;  Wang Zhanguo;  Xu Jingjun
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Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1519-1523
Authors:  Li Yuoyuan;  Wang Zhanguo;  Xu Bo;  Jin Peng;  Zhang Chunling;  Guo Xia;  Chen Min
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利用GaAs基上InGaAs应变层制备有序排列的InAs量子点 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1647-1651
Authors:  张春玲;  赵凤瑗;  徐波;  金鹏;  王占国
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快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 6, 页码: 684
Authors:  魏永强;  刘会云;  徐波;  丁鼎;  梁基本;  王占国
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大功率In(Ga)As/GaAs量子点激光器 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 8, 页码: 827
Authors:  王占国;  刘峰奇;  梁基本;  徐波;  丁鼎;  龚谦;  韩勤
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HEMT结构材料中二维电子气的输运性质研究 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 4, 页码: 292
Authors:  张兴宏;  夏冠群;  徐元森;  徐波;  杨玉芬;  王占国
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