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Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds  
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017802
Authors:  Liang ZM;  Jin C;  Jin P;  Wu J;  Wang ZG;  Liang ZM Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lzhm4321@red.semi.ac.cn
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Excitation Dependence  Line-shape  Photoluminescence  Deposition  Heterostructures  Epitaxy  
提高自组织量子点光学性质温度稳定性的材料结构 专利
专利类型: 发明, 申请日期: 2008-11-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  金灿;  金鹏;  王占国
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在半导体衬底上制备有序砷化铟量子点的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  金鹏;  徐波;  王赤云;  刘俊朋;  王智杰;  王占国
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砷化铟和砷化镓的纳米结构及其制作方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵超;  徐波;  陈涌海;  金鹏;  王占国
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一种量子点材料结构及其生长方法 专利
专利类型: 发明, 申请日期: 2008-03-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  焦玉恒;  吴巨;  徐波;  金鹏;  王占国
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长波长砷化铟/砷化镓量子点材料 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘宁;  金鹏;  王占国
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Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Inas  
InAs/GaAs量子点光致发光光谱多峰结构发光本质 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 11, 页码: 2121-2124
Authors:  梁志梅;  吴巨;  金鹏;  吕雪芹;  王占国
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A面(11-20)ZnO薄膜中杂质的偏振PL谱研究 期刊论文
光散射学报, 2008, 卷号: 20, 期号: 2, 页码: 186-189
Authors:  周立;  陈涌海;  金鹏;  王占国
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