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Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 014007
Authors:  Gao, Zhuo;  Wang, Jun;  Xiong, Cong;  Liu, Yuanyuan;  Liu, Suping;  Ma, Xiaoyu
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A low power flexible PGA for software defined radio systems 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 055006
Authors:  Li, Guofeng;  Wu, Nanjian
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A low power flexible PGA for software defined radio systems 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 055006
Authors:  Li, Guofeng;  Wu, Nanjian
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CMOS implementation of a low-power BPSK demodulator for wireless implantable neural command transmission 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 055005
Authors:  Wu, Zhaohui;  Zhang, Xu;  Liang, Zhiming;  Li, Bin
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Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 104002
Authors:  Li, Panpan;  Li, Hongjian;  Zhang, Yiyun;  Li, Zhicong;  Liang, Meng;  Li, Jing;  Wang, Guohong
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Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 054009
Authors:  Zheng, Huaiwen;  Zhang, Yiyun;  Yang, Hua;  Xue, Bin;  Wu, Kui;  Li, Jing;  Wang, Guohong
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Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 2, 页码: 024006
Authors:  Cui, Min;  Chen, Nuofu;  Yang, Xiaoli;  Zhang, Han
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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 6, 页码: 064005
Authors:  Yan, Wei;  Zhang, Renping;  Du, Yandong;  Han, Weihua;  Yang, Fuhua
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A CMOS AC/DC charge pump for a wireless sensor network 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 105003
Authors:  Zhang, Qiang;  Ni, Weining;  Shi, Yin;  Yu, Yude
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High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 4, 页码: 044006
Authors:  Zhang, Yu;  Wang, Yongbin;  Xu, Yingqiang;  Xu, Yun;  Niu, Zhichuan;  Song, Guofeng
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