SEMI OpenIR

Browse/Search Results:  1-1 of 1 Help

Filters                    
Selected(0)Clear Items/Page:    Sort:
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 12, 页码: Art. No. 125314
Authors:  Jahn U;  Brandt O;  Luna E;  Sun X;  Wang H;  Jiang DS;  Bian LF;  Yang;  H;  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
Adobe PDF(660Kb)  |  Favorite  |  View/Download:1286/316  |  Submit date:2010/04/28
Gan  Alloys