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Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 3, 页码: Art. No. 038504
Authors:  Zhu B (Zhu Bin);  Han Q (Han Qin);  Yang XH (Yang Xiao-Hong);  Ni HQ (Ni Hai-Qiao);  He JF (He Ji-Fang);  Niu ZC (Niu Zhi-Chuan);  Wang X (Wang Xin);  Wang XP (Wang Xiu-Ping);  Wang J (Wang Jie);  Zhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn
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Molecular-beam Epitaxy  Buffer Layers  Dark Current  Photodiodes  Lasers