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4H-SiC功率MOSFET研制 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  倪炜江
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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
Authors:  Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
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