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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates 期刊论文
RUSSIAN PHYSICS JOURNAL, 2014, 卷号: 57, 期号: 3, 页码: 359-363
Authors:  Emel;  Kokhanenko, AP;  Abramkin, DS;  Pchelyakov, OP;  Putyato, MA;  Semyagin, BR;  Preobrazhenskii, VV;  Vasilenko, AP;  Feklin, DF;  Niu, ZC;  Ni, HQ
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