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Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文
Physica E: Low-Dimensional Systems and Nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
Authors:  Li, Y.Q.;  Wang, X.D.;  Xu, X.N.;  Liu, W.;  Yang, F.H.;  Zeng, Y.P.;  Wang, X.D.(xdwang@semi.ac.cn)
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Electron Absorption  Indium Arsenide  Logic Circuits  Modfets  Modulation  Two Dimensional Electron Gas  
STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 卷号: 29, 期号: 2, 页码: 87-
Authors:  Yang W (Yang Wei);  Luo HH (Luo Hai-Hui);  Qian X (Qian Xuan);  Ji Y (Ji Yang);  Yang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: jiyang@semi.ac.cn
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Microwave  Reflectance  Two-dimensional Electron Gas(2deg)  Cyclotron Resonance  Quantum-wells  Gaas/algaas Heterostructures  Germanium  Silicon  
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 19, 页码: Art. No. 192107
Authors:  Luo HH;  Qian X;  Gu XF;  Ji Y;  Umansky V;  Ji Y Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China. E-mail Address: hhluo@semi.ac.cn;  jiyang@red.semi.ac.cn
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Aluminium Compounds  Carrier Lifetime  Gallium Arsenide  High-frequency Effects  Iii-v Semiconductors  Optical Kerr Effect  Semiconductor Heterojunctions  Spin Dynamics  Two-dimensional Electron Gas  
Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands 期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 4, 页码: 2481-2485
Authors:  Li-Yan, S;  Tie, L;  Wen-Zheng, Z;  Zhi-Ming, H;  Dong-Lin, L;  Hong-Ling, G;  Li-Jie, C;  Yi-Ping, Z;  Shao-Ling, G;  Jun-Hao, C;  Li-Yan, S, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
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Two-dimensional Electron Gas  Scattering Time  Self-consistent Calculation  
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 18, 页码: Art. No. 182111
Authors:  Xu, XQ;  Liu, XL;  Han, XX;  Yuan, HR;  Wang, J;  Guo, Y;  Song, HP;  Zheng, GL;  Wei, HY;  Yang, SY;  Zhu, QS;  Wang, ZG;  Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn;  qszhu@semi.ac.cn
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Aluminium Compounds  Dislocation Density  Electron Mobility  Gallium Compounds  Iii-v Semiconductors  Interface Roughness  Semiconductor Heterojunctions  Two-dimensional Electron Gas  Wide Band Gap Semiconductors  
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well 期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236
Authors:  Shang, LY;  Lin, T;  Zhou, WZ;  Li, DL;  Gao, HL;  Zeng, YP;  Guo, SL;  Yu, GL;  Chu, JH;  Chu, JH, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Two-dimensional Electron Gas  Positive Magnetoresistance  Intersubband Scattering  
Spin precession induced by an effective magnetic field in a two-dimensional electron gas 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 23, 页码: Art. No. 233108
Authors:  Liu GH;  Chen YH;  Jia CH;  Wang ZG;  Liu GH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Quantum Wells  Spin Polarised Transport  Spin-orbit Interactions  Two-dimensional Electron Gas  
Tuning of plasmon propagation in two-dimensional electrons 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 25, 页码: Art. No. 251501
Authors:  Li C;  Wu XG;  Li C Chinese Acad Sci SKLSM Inst Semicond Beijing 100083 Peoples R China. E-mail Address: lichao@semi.ac.cn
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Field Effect Transistors  Plasmons  Semiconductor Heterojunctions  Spin-orbit Interactions  Two-dimensional Electron Gas  
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Authors:  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Wang JX (Wang Junxi);  Li HP (Li Jianping);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
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Algan/aln/gan  Two-dimensional Electron Gas  Mocvd  Algan/gan Heterostructures  Polarization  Transistors  Ganhemts  Gas