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High Beam Quality of In-Phase Coherent Coupling 2-D VCSEL Arrays Based on Proton-Implantation 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 卷号: 26, 期号: 4, 页码: 395-397
Authors:  Mao, MM;  Xu, C;  Kan, Q;  Xie, YY;  Xun, M;  Xu, K;  Liu, JC;  Ren, HQ;  Chen, HD
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High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 1, 页码: 017805
Authors:  Xing, JL;  Zhang, Y;  Xu, YQ;  Wang, GW;  Wang, J;  Xiang, W;  Ni, HQ;  Ren, ZW;  He, ZH;  Niu, ZC
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Electrically controllable RKKY interaction in semiconductor quantum wires 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 1, 页码: Art. No. 113302
Authors:  Zhu JJ (Zhu Jia-Ji);  Chang K (Chang Kai);  Liu RB (Liu Ren-Bao);  Lin HQ (Lin Hai-Qing);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
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Magnetic-field  Electron-gas  Exchange  Spins  Dots  Manipulation  Computation  
单纵模布里渊掺铒光纤激光器的实验研究 期刊论文
光学学报, 2008, 卷号: 28, 期号: 9, 页码: 1740-1744
Authors:  陈伟;  张艳;  任民;  谢亮;  袁海庆;  王欣;  祝宁华
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MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693
Authors:  Hao RT (Hao Ruiting);  Xu YQ (Xu Yingqiang);  Zhou ZQ (Zhou Zhiqiang);  Ren ZW (Ren Zhengwei);  Ni HQ (Ni Haiqiao);  He ZH (He Zhenhong);  Niu ZC (Niu Zhichuan);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Molecular-beam Epitaxy  
Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084
Authors:  Hao RT (Hao Ruiting);  Xu YQ (Xu Yingqiang);  Zhou ZQ (Zhou Zhiqiang);  Ren ZW (Ren Zhengwei);  Ni HQ (Ni Haiqiao);  He ZH (He Zhenhong);  Niu ZC (Niu, Zhichuan);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Infrared Photodiodes  
GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 23, 页码: Art.No.231121
Authors:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  Zhao, H;  Peng, HL;  Xu, YQ;  Li, SY;  He, ZH;  Ren, ZW;  Han, Q;  Yang, XH;  Du, Y;  Wu, RH;  Zhang, SY, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zhangshiyong@tsinghua.org.cn
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PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE 期刊论文
CHINESE PHYSICS LETTERS, 1994, 卷号: 11, 期号: 4, 页码: 239-241
Authors:  LIU Y;  XIAO XR;  LI XP;  REN XM;  ZHENG HQ;  ZENG YP;  YAN CH;  SUN DZ;  LIU Y ACAD SINICACTR PHOTOELECTROCHEMINST PHOTOG CHEMBEIJING 100101PEOPLES R CHINA
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Photocurrent Spectroscopy