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基于目标特征尺寸的可视化被动测距系统 期刊论文
光学精密工程, 2018, 卷号: 26, 期号: 1, 页码: 245-252
Authors:  杨金宝;  杨晨;  刘建国;  祝宁华;  于丽娟;  刘亚超
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特征尺寸  被动测距  可视化  
Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 98, 页码: 55430-55434
Authors:  Zheng, CC;  Ning, JQ;  Wu, ZP;  Wang, JF;  Zhao, DG;  Xu, K;  Gao, J;  Xu, SJ
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Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:  Zheng CC (Zheng, C. C.);  Xu SJ (Xu, S. J.);  Zhang F (Zhang, F.);  Ning JQ (Ning, J. Q.);  Zhao DG (Zhao, D. G.);  Yang H (Yang, H.);  Che CM (Che, C. M.)
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Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 3, 页码: 35008
Authors:  Zheng, CC;  Xu, SJ;  Ning, JQ;  Bao, W;  Wang, JF;  Gao, J;  Liu, JM;  Zhu, JH;  Liu, XL
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Quantum cascade infrared photodetectors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1397-1402
Authors:  Liu, Junqi;  Zhai, Shenqiang;  Kong, Ning;  Li, Lu;  Liu, Fengqi;  Wang, Lijun;  Wang, Zhanguo;  Liu, J.(jqliu@semi.ac.cn)
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Detectors  Electron Mobility  Infrared Detectors  Optoelectronic Devices  Photovoltaic Effects  Quantum Chemistry  Semiconductor Quantum Wells  
高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 期刊论文
物理学报, 2011, 卷号: 60, 期号: 5, 页码: 056104-1-056104-6
Authors:  唐海马;  郑中山;  张恩霞;  于芳;  李宁;  王宁娟;  李国花;  马红芝
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量子级联红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1397-1402
Authors:  刘俊岐;  翟慎强;  孔宁;  李路;  刘峰奇;  王利军;  王占国
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电学测试的汞探针装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  纪 刚;  孙国胜;  宁 瑾;  刘兴昉;  赵永梅;  王 雷;  赵万顺;  曾一平;  李晋闽
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Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
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Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors  
Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 8, 页码: Art. No. 088101
Authors:  Sun GS (Sun Guo-Sheng);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Yang T (Yang Ting);  Wu HL (Wu Hai-Lei);  Yan GG (Yan Guo-Guo);  Zhao YM (Zhao Yong-Mei);  Ning J (Ning Jin);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min)
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3c-sic  Heteroepitaxial  Multi-wafer  Uniformity