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A Dry Electrode Cap and Its Application in a Steady-State Visual Evoked Potential-Based Brain–Computer Interface 期刊论文
Electronics, 2019, 卷号: 8, 期号: 10, 页码: 1080
Authors:  Xiaoting Wu;  Li Zheng;  Lu Jiang;  Xiaoshan Huang;  Yuanyuan Liu;  Lihua Xing;  Xiao Xing;  Yijun Wang;  Weihua Pei;  Xiaowei Yang;  Zhiduo Liu;  Chunrong Wei;  Yamin Li;  Miao Yuan;  Hongda Chen
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Tunable Schottky barrier width and enormously enhanced photo- responsivity in Sb doped SnS 2 monolayer 期刊论文
Nano Research, 2019, 卷号: 12, 期号: 2, 页码: 463-468
Authors:  Junchi Liu ;   Xiao Liu ;   Zhuojun Chen ;   Lili Miao ;   Xingqiang Liu ;   Bo Li ;   Liming Tang ;   Keqiu Chen ;   Yuan Liu ;   Jingbo Li ;   Zhongming Wei ;   Xidong Duan
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Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:  Yang, J (Yang Jun);  Zhao, YW (Zhao You-Wen);  Dong, ZY (Dong Zhi-Yuan);  Deng, AH (Deng Ai-Hong);  Miao, SS (Miao Shan-Shan);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:  Zhao, YW (Zhao You-Wen);  Miao, SS (Miao Shan-Shan);  Dong, ZY (Dong Zhi-Yuan);  Lue, XH (Lue Xiao-Hong);  Deng, AH (Deng Ai-Hong);  Yang, J (Yang Jun);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Indium Phosphide  
Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:  Wang B (Wang Bo);  Zhao YW (Zhao You-Wen);  Dong ZY (Dong Zhi-Yuan);  Deng AH (Deng Ai-Hong);  Miao SS (Miao Shan-Shan);  Yang J (Yang Jun);  Zhao, YW, Sichuan Univ, Coll Phys Sci & Technol, Dept Appl Phys, Chengdu 610065, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
高温退火后非掺杂磷化铟材料的电子辐照缺陷 期刊论文
物理学报, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:  王博;  赵有文;  董志远;  邓爱红;  苗杉杉;  杨俊
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深能级缺陷对半绝缘InP材料电学补偿的影响 期刊论文
物理学报, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:  杨俊;  赵有文;  董志远;  邓爱红;  苗杉杉;  王博
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磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响 期刊论文
物理学报, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:  赵有文;  苗杉杉;  董志远;  吕小红;  邓爱红;  杨俊;  王博
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半绝缘InP的铁掺杂激活与电学补偿 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1934-1939
Authors:  苗杉杉;  赵有文;  董志远;  邓爱红;  杨俊;  王博
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