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Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文
Thin solid films, 2013, 卷号: 534, 页码: 655–658
Authors:  Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
SOLID STATE COMMUNICATIONS, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(477Kb)  |  Favorite  |  View/Download:569/207  |  Submit date:2013/10/10
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
THIN SOLID FILMS, 2013, 卷号: 534, 页码: 655-658
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(570Kb)  |  Favorite  |  View/Download:898/237  |  Submit date:2013/08/27
Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
Thin Solid Films, 2013, 卷号: 534, 页码: 655–658
Authors:  Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
Adobe PDF(570Kb)  |  Favorite  |  View/Download:264/84  |  Submit date:2014/05/08
Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 页码: 024515
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Jin, Guangri;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
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Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Authors:  Ji, Dong;  Liu, Bing;  Lu, Yanwu;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(979Kb)  |  Favorite  |  View/Download:570/193  |  Submit date:2013/05/13
A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
Adobe PDF(117Kb)  |  Favorite  |  View/Download:1071/289  |  Submit date:2012/02/22
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083112
Authors:  Song YF (Song Yafeng);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Xu XQ (Xu Xiaoqing);  Wang J (Wang Jun);  Guo Y (Guo Yan);  Shi K (Shi Kai);  Li ZW (Li Zhiwei);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Song, YF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songyafeng@semi.ac.cn
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Optical Phonon Energy  Inversion-layers  Transitions  Relaxation  Lasers  States  
纳米硅薄膜中的量子点特征 期刊论文
自然科学进展, 1996, 卷号: 6, 期号: 6, 页码: 700
Authors:  何宇亮;  余明斌;  吕燕伍;  戎霭伦;  刘剑;  徐士杰;  罗克俭;  奚中和
Adobe PDF(393Kb)  |  Favorite  |  View/Download:1214/297  |  Submit date:2010/11/23