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Experimental evidence for an anisotropic Berry-phase effect on the anomalous Hall effect in MnAs films 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 064402
Authors:  J. L. Ma;   H. L. Wang;   X. L. Wang;   J. H. Zhao
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Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 7, 页码: 072404
Authors:  Yu, J. L.;  Chen, Y. H.;  Liu, Y.;  Jiang, C. Y.;  Ma, H.;  Zhu, L. P.;  Qin, X. D.
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Intrinsic photoinduced anomalous Hall effect in insulating GaAs_AlGaAs quantum wells at room temperature 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 20, 页码: 202408 - 202408-5
Authors:  J. L. Yu, Y. H. Chen, Y. Liu, C. Y. Jiang, H. Ma, L. P. Zhu, X. D. Qin
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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073111
Authors:  Ding Y (Ding Y.);  Fan WJ (Fan W. J.);  Ma BS (Ma B. S.);  Xu DW (Xu D. W.);  Yoon SF (Yoon S. F.);  Liang S (Liang S.);  Zhao LJ (Zhao L. J.);  Wasiak M (Wasiak M.);  Czyszanowski T (Czyszanowski T.);  Nakwaski W (Nakwaski W.);  Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: yding@ntu.edu.sg
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Vapor-phase Epitaxy  Photovoltage Spectroscopy  Photoluminescence  Modes  
880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM 期刊论文
LASER PHYSICS LETTERS, 2010, 卷号: 7, 期号: 10, 页码: 711-714
Authors:  Sun L (Sun L.);  Zhang L (Zhang L.);  Yu HJ (Yu H. J.);  Guo L (Guo L.);  Ma JL (Ma J. L.);  Zhang J (Zhang J.);  Hou W (Hou W.);  Lin XC (Lin X. C.);  Li JM (Li J. M.);  Sun, L, Chinese Acad Sci, Inst Semicond, Lab All Solid State Laser Sources, Beijing 100083, Peoples R China. 电子邮箱地址: sunlu2446@yahoo.com.cn
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Saturable-absorber Mirror  Nd-yag Laser  Picosecond Laser  Repetition-rate  Slab Laser  Nd-yvo4  Efficiency  Resonator  Diode-pumped Laser  Mode-locked Laser  Tem00  
Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm 期刊论文
LASER PHYSICS LETTERS, 2010, 卷号: 7, 期号: 8, 页码: 579-582
Authors:  Ma JL (Ma J. L.);  Xiong B (Xiong B.);  Guo L (Guo L.);  Zhao PF (Zhao P. F.);  Zhang L (Zhang L.);  Lin XC (Lin X. C.);  Li JM (Li J. M.);  Duanmu QD (Duanmu Q. D.);  Ma, JL, Changchun Univ Sci & Technol, Changchun 130022, Jilin, Peoples R China. E-mail Address: custmjl@163.com
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Lasers  High Efficiency  Low Heat  Nd:Gdvo4  
A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode 期刊论文
LASER PHYSICS, 2010, 卷号: 20, 期号: 6, 页码: 1350-1353
Authors:  Ma J (Ma J.);  Guo L (Guo L.);  Xiong B (Xiong B.);  Yan X (Yan X.);  Zhang S (Zhang S.);  Chen R (Chen R.);  Zhao W (Zhao W.);  Lin X (Lin X.);  Li J (Li J.);  Duanmu Q (Duanmu Q.)
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Ndyvo4 Slab Laser  Short-pulse-width  Composite Crystal  Oscillator  Operation  
High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror 期刊论文
LASER PHYSICS, 2007, 卷号: 17, 期号: 8, 页码: 1033-1036
Authors:  Peng, JY (Peng, J. Y.);  Wang, BS (Wang, B. S.);  Wang, YG (Wang, Y. G.);  Miao, JG (Miao, J. G.);  Hao, EJ (Hao, E. J.);  Tan, HM (Tan, H. M.);  Qian, LS (Qian, L. S.);  Ma, XY (Ma, X. Y.);  Peng, JY, Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130022, Peoples R China. 电子邮箱地址: jiyingpeng111@163.com
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Saturable-absorber  
半导体可饱和吸收镜及其制作方法 专利
专利类型: 发明, 申请日期: 2006-10-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王翠鸾;  王勇刚;  林涛;  王俊;  郑凯;  冯小明;  仲莉;  马杰慧;  马骁宇
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Self-organized hexagonal ordering of quantum dot arrays 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 23, 页码: 5765-5768
Authors:  Ma WQ (Ma W. Q.);  Sun YW (Sun Y. W.);  Yang XJ (Yang X. J.);  Jiang DS (Jiang D. S.);  Chen LH (Chen L. H.);  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wqma@semi.ac.cn
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Surface  Growth  Superlattices  Islands