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The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
Authors:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li;  Xu Han;  Ye Yu;  Liang Chen;  Degang Zhaoand Guotong Du
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