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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition 期刊论文
Chinese Physics Letters, 2016, 卷号: 33, 期号: 6, 页码: 068101
Authors:  Peng Ren;  Gang Han;  Bing-Lei Fu;  Bin Xue;  Ning Zhang;  Zhe Liu;  Li-Xia Zhao;  Jun-Xi Wang;  Jin-Min Li
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GaN材料掺杂特性及LED器件droop效应研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  付丙磊
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Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 8, 页码: 087101
Authors:  ZHANG Ning, LIU Zhe, SI Zhao, REN Peng, WANG Xiao-Dong, FENG Xiang-Xu, DONG Peng, DU Cheng-Xiao, ZHU Shao-Xin, FU Bing-Lei, LU Hong-Xi, LI Jin-Min, WANG Jun-Xi
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掺Er凝胶玻璃中Er离子发光性质的研究 期刊论文
光谱学与光谱分析, 1998, 卷号: 18, 期号: 2, 页码: 177
Authors:  谢大;  吴瑾光;  徐端夫;  胡天斗;  周维金;  徐光宪;  王启明;  杨沁清;  雷宏兵
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利用AlInGaN制作氮化镓外延薄膜的方法 专利
专利类型: 发明, 公开日期: 2014
Inventors:  冯向旭;  张宁;  刘乃鑫;  付丙磊;  朱绍歆;  张连;  魏同波;  王军喜;  李晋闽
Adobe PDF(231Kb)  |  Favorite  |  View/Download:772/133  |  Submit date:2014/11/17