SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-1 of 1 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:  Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR;  Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com
Adobe PDF(264Kb)  |  Favorite  |  View/Download:1378/552  |  Submit date:2010/03/09
X-ray Diffraction