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Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 2, 页码: 516-519
Authors:  Wang H;  Huang Y;  Sun Q;  Chen J;  Zhu JJ;  Wang LL;  Wang YT;  Yang H;  Wu MF;  Qu YH;  Jiang DS;  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn
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X-ray Diffraction