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MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1475/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Tunable MQW-DBR lasers using selective area growth 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Liu GL;  Wang W;  Zhang JY;  Chen WX;  Xu GY;  Zhang BJ;  Zhou F;  Wang XJ;  Zhu HL;  Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(199Kb)  |  收藏  |  浏览/下载：1534/418  |  提交时间：2010/10/29
Selective Area Growth  Multi-quantum-well  Distributed Bragg Reflector Laser  Mocvd  Tunable Laser  Epitaxy