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Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Authors:  Zhao YW (Zhao Y. W.);  Dong ZY (Dong Z. Y.);  Deng AH (Deng A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Indium Phosphide  Defect  Irradiation  Thermally Stimulated Current  Undoped Semiinsulating Inp  Deep-level Defects  Frenkel Pairs  Fe  Spectroscopy  Phosphide  Ambient  Traps  
Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Zhao, YW (Zhao, Y. W.);  Dong, ZY (Dong, Z. Y.);  Deng, AH (Deng, A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide  
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Authors:  Zhao, YW;  Dong, HW;  Li, JM;  Ling, LY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide