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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1528/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Yu JZ (Yu Jinzhong);  Chen SW (Chen Shaowu);  Li ZY (Li Zhiyong);  Chen YY (Chen Yuanyuan);  Li YT (Li Yuntao);  Li YP (Li Yanping);  Liu JW (Liu Jingwei);  Yang D (Yang Di);  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：2469/692  |  提交时间：2010/03/29
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