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Recent progress in diamond-based MOSFETs 期刊论文
International Journal of Minerals, Metallurgy, and Materials, 2019, 卷号: 26, 期号: 10, 页码: 1195-1205
Authors:  Xiao-lu Yuan;  Yu-ting Zheng;  Xiao-hua Zhu;  Jin-long Liu;  Jiang-wei Liu;  Cheng-ming Li;  Peng Jin;  Zhan-guo Wang
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Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films 期刊论文
Crystal Growth and Design, 2019, 卷号: 19, 期号: 1, 页码: 453-459
Authors:  Junhua Meng;   Bangming Ming;   Xingwang Zhang;   Menglei Gao;   Likun Cheng;   Zhigang Yin;   Denggui Wang;   Xingxing Li;   Jingbi You;   Ruzhi Wang
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Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field 期刊论文
Vacuum, 2017, 卷号: 142, 页码: 66-71
Authors:  Ming Han;  Yong Ren;  Jiachen Li;  Yonghai Chen;  Weifeng Zhang;  Caihong Jia
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A grating-coupled external cavity InAs_InP quantum dot laser with 85-nm tuning range 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 094211
Authors:  Wei Heng, Jin Peng, Luo Shuai, Ji Hai-Ming, Yang Tao, Li Xin-Kun, Wu Jian, An Qi, Wu Yan-Hua, Chen Hong-Mei, Wang Fei-Fei, Wu Ju, Wang Zhan-Guo
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Study on proton irradiation induced defects in GaN thick film 期刊论文
Acta Physica Sinica, 2013, 卷号: 62, 期号: 11, 页码: 117103
Authors:  Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui
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Spacer layer thickness fluctuation scattering in a modulation-doped Al xGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu, Cheng-Yan;  Liu, Gui-Peng;  Shi, Kai;  Song, Ya-Feng;  Li, Cheng-Ming;  Liu, Xiang-Lin;  Yang, Shao-Yan;  Zhu, Qin-Sheng;  Wang, Zhan-Guo
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Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 10, 页码: 107305
Authors:  Gu CY (Gu Cheng-Yan);  Liu GP (Liu Gui-Peng);  Shi K (Shi Kai);  Song YF (Song Ya-Feng);  Li CM (Li Cheng-Ming);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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提高聚合物太阳电池效率的制备方法 专利
专利类型: 发明, 专利号: CN201010554257.3, 公开日期: 2011-08-31
Inventors:  谭海仁;  张兴旺;  高红丽;  白一鸣;  张秀兰;  尹志岗
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具有硅纳米线结构的硅薄膜太阳能电池的制备方法 专利
专利类型: 发明, 公开日期: 2013-03-20, 2013-03-20
Inventors:  谢小兵;  曾湘波;  杨萍;  李洁;  李敬彦;  张晓东;  王启明
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大尺寸非极性A面GaN自支撑衬底的制备方法 专利
专利类型: 发明, 公开日期: 2016-09-29
Inventors:  李辉杰;  杨少延;  魏鸿源;  赵桂娟;  汪连山;  李成明;  刘祥林;  王占国
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