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倒锥波导耦合器的制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-27, 2010-08-12
Inventors:  尹小杰;  王 玥;  吴远大;  安俊明;  李建光;  王红杰;  胡雄伟
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一种主方向神经网络系统 专利
专利类型: 发明, 申请日期: 2009-09-30, 公开日期: 4008
Inventors:  殷维栋;  王守觉
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在硅衬底上生长的氮化镓薄膜结构及其生长方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  王晓亮;  罗卫军;  郭伦春;  肖红领;  李建平;  李晋闽 
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Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
Authors:  Zheng WH (Zheng Wanhua);  Xing MX (Xing Mingxin);  Chen;  W (Chen Wei);  Zhou WJ (Zhou Wenjun);  Liu AJ (Liu Anjin);  Wang HL (Wang Hailing);  Chen LH (Chen Lianghui)
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Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection 期刊论文
OPTICS EXPRESS, 2009, 卷号: 17, 期号: 24, 页码: 22114-22123
Authors:  Zhu NH (Zhu Ning Hua);  Zhang HG (Zhang Hong Guang);  Man JW (Man Jiang Wei);  Zhu HL (Zhu Hong Liang);  Ke JH (Ke Jian Hong);  Liu Y (Liu Yu);  Wang X (Wang Xin);  Yuan HQ (Yuan Hai Qing);  Xie L (Xie Liang);  Wang W (Wang Wei);  Zhu, NH, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Phase-locked Loop  
Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution 期刊论文
CRYSTAL GROWTH & DESIGN, 2009, 卷号: 9, 期号: 7, 页码: 3292-3295
Authors:  Song HP;  Yang AL;  Zhang RQ;  Guo Y;  Wei HY;  Zheng GL;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Song HP Chinese Acad Sci Kev Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:;;
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Indium Nitride Nanowires  Gan  
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 7, 页码: 753-757
Authors:  Wei TB;  Hu Q;  Duan RF;  Wang JX;  Zeng YP;  Li JM;  Yang Y;  Liu YL;  Wei TB Chinese Acad Sci Semicond Lighting Technol Res & Dev Ctr Inst Semicond Beijing 100083 Peoples R China. E-mail Address:
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Gan  Nonpolar  Hvpe  Nanoindentation  Cathodoluminescence  Raman Mapping  
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 22, 页码: Art. No. 222114
Authors:  Song HP;  Yang AL;  Wei HY;  Guo Y;  Zhang B;  Zheng GL;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Yang TY;  Wang HH;  Song HP Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:;
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Conduction Bands  Iii-v Semiconductors  Indium Compounds  Semiconductor Heterojunctions  Semiconductor Materials  Valence Bands  X-ray Photoelectron Spectra  
Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 2, 页码: 278-281
Authors:  Yang AL;  Wei HY;  Liu XL;  Song HP;  Zheng GL;  Guo Y;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Liu XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:;
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Nanostructures  Metalorganic Chemical Vapor Deposition  Zinc Compounds  Semiconducting Ii-vi Materials  
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 8, 页码: Art.No.084510
Authors:  Jiang XW (Jiang Xiang-Wei);  Deng HX (Deng Hui-Xiong);  Li SS (Li Shu-Shen);  Luo JW (Luo Jun-Wei);  Wang LW (Wang Lin-Wang);  Jiang, XW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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