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Influence of the rapid thermal annealing on the properties of thin a-Si films 会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:  Nedev N;  Beshkov G;  Fortunato E;  Georgiev SS;  Ivanov T;  Raniero L;  Zhang SB;  Martins R;  Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
Adobe PDF(242Kb)  |  收藏  |  浏览/下载：1113/183  |  提交时间：2010/10/29
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Hao, HY;  Zhang, SB;  Xu, YY;  Zeng, XB;  Diao, HW;  Kong, GL;  Liao, XB;  Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1258/230  |  提交时间：2010/03/29
Open-circuit Voltage  Silicon Solar-cells  Amorphous-silicon  Absorption