SEMI OpenIR

Browse/Search Results:  1-7 of 7 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  Xu XH;  Niu ZC;  Ni HQ;  Xu YQ;  Zhang W;  He ZH;  Han Q;  Wu RH;  Jiang DS;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
Adobe PDF(199Kb)  |  Favorite  |  View/Download:918/250  |  Submit date:2010/03/17
Molecular Beam Epitaxy  
Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices 期刊论文
ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 5, 页码: 1474-1482
Authors:  Ni HQ;  Xu XH;  Wei Z;  Xu YQ;  Niu ZC;  Wu RH;  Ni, HQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  Favorite  |  View/Download:840/242  |  Submit date:2010/03/09
Superlattice  
Study of optical properties in GaAs1-xSbx/GaAs single quantum wells 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 7, 页码: 1761-1765
Authors:  Luo XD;  Bian LF;  Xu ZY;  Luo HL;  Wang YQ;  Wang JN;  Ge WK;  Luo XD,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(212Kb)  |  Favorite  |  View/Download:1054/343  |  Submit date:2010/08/12
Gaassb/gaas  Selectively-excited  Type Ii Transition  Room-temperature  Gaas  Dots  Operation  
Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 3, 页码: 736-739
Authors:  Chen CY;  Chen WD;  Wang YQ;  Song SF;  Xu ZJ;  Chen CY,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(154Kb)  |  Favorite  |  View/Download:906/249  |  Submit date:2010/08/12
E3++  Nc-si  h Treatment  Room-temperature Luminescence  Nanocrystals  Implantation  
Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film 期刊论文
ACTA PHYSICA SINICA, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570
Authors:  Wang YQ;  Chen WD;  Chen CY;  Diao HW;  Zhang SB;  Xu YY;  Kong GL;  Liao XB;  Wang YQ,Chinese Acad Sci,Inst Semicond,State Key Lab Surface Phys,Beijing 100083,Peoples R China.
Adobe PDF(242Kb)  |  Favorite  |  View/Download:1132/345  |  Submit date:2010/08/12
Silicon-rich Silicon Oxide  Microstructure  Light-emission  Rapid Thermal Annealing  Chemical-vapor-deposition  Amorphous-silicon  Porous Silicon  Si  Luminescence  Nanocrystals  Spectra  System  
Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文
ACTA PHYSICA SINICA, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Authors:  Zhang SB;  Liao XB;  An L;  Yang FH;  Kong GL;  Wang YQ;  Xu YY;  Chen CY;  Diao HW;  Zhang SB,Chinese Acad Sci,Inst Semicond,State Key Lab Surface Phys,Beijing 100083,Peoples R China.
Adobe PDF(176Kb)  |  Favorite  |  View/Download:1012/353  |  Submit date:2010/08/12
Amorphous Silicon  Film  Raman Scattering  Microstructure  Si-h Films  Microcrystalline Silicon  Amorphous Si  Light-scattering  Spectra  
Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films 期刊论文
ACTA PHYSICA SINICA, 2002, 卷号: 51, 期号: 1, 页码: 111-114
Authors:  Zhang SB;  Kong GL;  Xu YY;  Wang YQ;  Diao HW;  Liao XB;  Zhang SB,Chinese Acad Sci,State Lab Surface Phys,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(146Kb)  |  Favorite  |  View/Download:640/207  |  Submit date:2010/08/12
Amorphous Silicon  Transient Photoconductivity  Light-induced Change