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Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 20, 页码: Art.No.201917
Authors:  Wang WJ;  Yang XD;  Ma BS;  Sun Z;  Su FH;  Ding K;  Xu ZY;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Wang, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Pair Luminescence  Gap-n  Gaas  Excitons  Alloy  
Comparison of the properties of GaN grown on complex Si-based structures 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 8, 页码: Art.No.081912
Authors:  Zhou, SQ;  Vantomme, A;  Zhang, BS;  Yang, H;  Wu, MF;  Vantomme, A, Katholieke Univ Leuven, Inst Voor Kern Stralingsfys, B-3001 Heverlee, Belgium. 电子邮箱地址:
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Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 22, 页码: 4130-4132
Authors:  Wu MF;  Chen CC;  Zhu DZ;  Zhou SQ;  Vantomme A;  Langouche G;  Zhang BS;  Yang H;  Wu MF,Peking Univ,Dept Tech Phys,Beijing 100871,Peoples R China.
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X-ray-diffraction  Elastic Strain  Ingan