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Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
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Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Yan, JC;  Wang, JX;  Liu, Z;  Liu, NX;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
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Diodes  
Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 2, 页码: Art.No.023506
Authors:  Yan FW (Yan Fawang);  Gao HY (Gao Haiyong);  Zhang HX (Zhang Huixiao);  Wang GH (Wang Guohong);  Yang FH (Yang Fuhua);  Yan JC (Yan Jianchang);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li, Jinmin);  Yan, FW, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China. 电子邮箱地址: fwyan@red.semi.ac.cn
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Gallium Nitride  
First and second order Raman scattering spectroscopy of nonpolar a-plane GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 10, 页码: Art.No.103533
Authors:  Gao HY (Gao Haiyong);  Yan FW (Yan Fawang);  Zhang HX (Zhang Huixiao);  Li JM (Li Jinmin);  Wang JX (Wang Junxi);  Yan JC (Yan Jianchang);  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@semi.ac.cn
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Hexagonal Gan  
Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 卷号: 203, 期号: 15, 页码: 3788-3792
Authors:  Gao, HY (Gao, Haiyong);  Yan, FW (Yan, Fawang);  Li, JM (Li, Jinmin);  Wang, JX (Wang, Junxi);  Yan, JC (Yan, Jianchang);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@semi.ac.cn
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Time-resolved Photoluminescence  
Parameters determining crystallinity in beta-SiC thin films prepared by catalytic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 1-2, 页码: 176-180
Authors:  Zhao Q;  Li JC;  Zhou H;  Wang H;  Wang B;  Yan H;  Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Catalytic Chemical Vapor Deposition  
在多工位炉上CeO_2:Bi_12SiO_20单晶生长的研究(II)——空间生长实验部分 期刊论文
无机材料学报, 2004, 卷号: 19, 期号: 2, 页码: 283-288
Authors:  周燕飞;  王锦昌;  唐连安;  陈诺夫;  陈万春
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