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High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 027801
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Ma;  WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Threshold Current  Room-temperature  Dependence  Photoluminescence