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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
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Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
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Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
Authors:  Guo Y;  Liu XL;  Song HP;  Yang AL;  Xu XQ;  Zheng GL;  Wei HY;  Yang SY;  Zhu QS;  Wang ZG;  Guo, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Tingshua E Rd 35,POB 912, Beijing 100083, Peoples R China.E-mail Address: guoyan@semi.ac.cn;  xlliu@semi.ac.cn
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Movpe  In-rich Ingan  Indium Incorporation  Molecular-beam Epitaxy  Chemical-vapor-deposition  Critical Thickness  Droplet Formation  Phase-separation  Temperature  Films  Heterostructures  Immiscibility  Inxga1-xn  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610
Authors:  Zheng GL;  Yang AL;  Wei HY;  Liu XL;  Song HP;  Guo;  Y;  Jia CH;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Zheng, GL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: zhenggl@semi.ac.cn;  xlliu@semi.ac.cn
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Zno  Metal-organic Chemical Vapor Deposition  Infrared Absorption  Surface  Ray Photoelectron-spectroscopy  Polar-surface  Epitaxy  
Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution 期刊论文
CRYSTAL GROWTH & DESIGN, 2009, 卷号: 9, 期号: 7, 页码: 3292-3295
Authors:  Song HP;  Yang AL;  Zhang RQ;  Guo Y;  Wei HY;  Zheng GL;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Song HP Chinese Acad Sci Kev Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: songhp@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Indium Nitride Nanowires  Gan  
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 22, 页码: Art. No. 222114
Authors:  Song HP;  Yang AL;  Wei HY;  Guo Y;  Zhang B;  Zheng GL;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Yang TY;  Wang HH;  Song HP Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: songhp@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(216Kb)  |  Favorite  |  View/Download:1525/594  |  Submit date:2010/03/08
Conduction Bands  Iii-v Semiconductors  Indium Compounds  Semiconductor Heterojunctions  Semiconductor Materials  Valence Bands  X-ray Photoelectron Spectra