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Study of infrared luminescence from Er-implanted GaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：1284/325  |  提交时间：2010/11/15
Doping  Metalorganic Chemical Vapor Deposition  Molecular Beam Epitaxy  Gallium Compounds  Semiconducting Gallium Compounds  Erbium  
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 会议论文
CHINESE PHYSICS, 10, BEIJING, PEOPLES R CHINA, OCT 30-NOV 02, 2000
作者:  Liu JW;  Xie FQ;  Zhong DY;  Wang EG;  Liu WX;  Li SF;  Yang H;  Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
收藏  |  浏览/下载：863/0  |  提交时间：2010/11/15
Luminescence  Sic  Nanocrystalline Film  Rf Sputtering  Raman-scattering  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1146/252  |  提交时间：2010/11/15
Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe